How to Use IR2110: Examples, Pinouts, and Specs

The IR2110, manufactured by Infineon Technologies AG (Part ID: INFINEON), is a high-voltage, high-speed power MOSFET and IGBT driver. It features independent high-side and low-side output channels, making it ideal for driving the gates of power transistors in half-bridge and full-bridge configurations. The IR2110 provides level shifting and isolation, ensuring efficient and reliable switching in power electronics applications.

• DC-DC converters
• Motor control systems
• Inverters for renewable energy systems (e.g., solar inverters)
• Uninterruptible Power Supplies (UPS)
• High-frequency switching power supplies

The IR2110 is available in a 14-pin package. Below is the pinout and description:

1. Power Supply Configuration:

   • Connect the Vcc pin to a stable 10V-20V supply.
   • Use a bootstrap capacitor between VB and VS to provide the high-side floating supply voltage.

2. Input Signals:

   • Provide logic-level signals (e.g., from a microcontroller) to the HIN and LIN pins to control the high-side and low-side drivers, respectively.
   • Ensure proper dead-time between HIN and LIN signals to avoid shoot-through.

3. Gate Drive Outputs:

   • Connect the HO pin to the gate of the high-side MOSFET/IGBT and the LO pin to the gate of the low-side MOSFET/IGBT.
   • Use appropriate gate resistors to limit inrush current and control switching speed.

4. Bootstrap Capacitor:

   • Select a bootstrap capacitor (typically 0.1 µF to 1 µF) based on the gate charge of the high-side MOSFET/IGBT.

5. Grounding:

   • Connect the COM pin to the logic ground and the VSS pin to the low-side return.

• Dead-Time Management: Ensure sufficient dead-time between high-side and low-side switching to prevent shoot-through.
• Bootstrap Capacitor Sizing: Choose a capacitor with low ESR and sufficient capacitance to maintain the high-side supply voltage during switching.
• Thermal Management: Ensure proper heat dissipation, especially in high-frequency or high-current applications.
• Input Signal Integrity: Use clean, noise-free logic signals to drive the HIN and LIN pins.

Below is an example of how to control the IR2110 using an Arduino UNO to drive a half-bridge circuit:

// Example: Controlling IR2110 with Arduino UNO
// This code generates complementary PWM signals with dead-time for a half-bridge circuit.

const int HIN_PIN = 9; // High-side input connected to Arduino pin 9
const int LIN_PIN = 10; // Low-side input connected to Arduino pin 10

void setup() {
  pinMode(HIN_PIN, OUTPUT); // Set HIN pin as output
  pinMode(LIN_PIN, OUTPUT); // Set LIN pin as output
}

void loop() {
  digitalWrite(HIN_PIN, HIGH); // Turn on high-side MOSFET
  digitalWrite(LIN_PIN, LOW);  // Ensure low-side MOSFET is off
  delayMicroseconds(10);       // Dead-time (adjust as needed)

  digitalWrite(HIN_PIN, LOW);  // Turn off high-side MOSFET
  digitalWrite(LIN_PIN, HIGH); // Turn on low-side MOSFET
  delayMicroseconds(10);       // Dead-time (adjust as needed)
}

1. High-Side Driver Not Working:

   • Check the bootstrap capacitor connection and ensure it is properly sized.
   • Verify that the VB pin voltage is sufficiently higher than the VS pin voltage.

2. Excessive Heat:

   • Ensure proper dead-time between high-side and low-side switching.
   • Use appropriate gate resistors to limit switching losses.

3. No Output Signal:

   • Verify the input signals (HIN and LIN) are within the logic voltage range.
   • Check the Vcc supply voltage and ensure it is stable.

4. Shoot-Through in MOSFETs:

   • Increase the dead-time between HIN and LIN signals.
   • Verify the gate drive signals with an oscilloscope.

Q1: Can the IR2110 drive both N-channel and P-channel MOSFETs?
A1: The IR2110 is designed to drive N-channel MOSFETs or IGBTs in half-bridge or full-bridge configurations. It is not suitable for P-channel MOSFETs.

Q2: What is the maximum switching frequency of the IR2110?
A2: The maximum switching frequency depends on the load capacitance and gate charge of the MOSFET/IGBT. Typically, it can operate up to several hundred kHz.

Q3: How do I calculate the bootstrap capacitor value?
A3: The bootstrap capacitor value can be calculated using the formula:
[ C_{boot} \geq \frac{Q_g}{\Delta V} ]
Where ( Q_g ) is the total gate charge of the high-side MOSFET/IGBT, and ( \Delta V ) is the allowable voltage drop across the capacitor.

Q4: Can I use the IR2110 for three-phase motor control?
A4: Yes, the IR2110 can be used in three-phase motor control applications by using three IR2110 drivers to control the six MOSFETs/IGBTs in the inverter.

This concludes the documentation for the IR2110.