How to Use IR2110S High voltage, high speed, high/low side power MOSFET and IGBT driver: Examples, Pinouts, and Specs

The IR2110S, manufactured by International Rectifier, is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. This component is designed to drive power MOSFETs and IGBTs in a half-bridge configuration, making it ideal for a variety of applications including motor drives, power supplies, and DC-DC converters.

• Motor control
• DC-DC converters
• Power supplies
• Inverters
• Uninterruptible Power Supplies (UPS)

1. Power Supply Connections:

   • Connect Vcc to a stable power supply between 10V and 20V.
   • Connect Vss to the ground of the logic circuit.
   • Connect COM to the ground of the power circuit.

2. Input Signals:

   • Apply logic signals to HIN and LIN to control the high side (HO) and low side (LO) outputs, respectively.

3. Output Connections:

   • Connect HO to the gate of the high side MOSFET or IGBT.
   • Connect LO to the gate of the low side MOSFET or IGBT.
   • Connect VS to the source of the high side MOSFET or IGBT.
   • Connect VB to a bootstrap capacitor connected to VS.

• Ensure that the supply voltage (Vcc) is within the specified range (10V to 20V).
• Use appropriate decoupling capacitors close to the Vcc and Vss pins to filter out noise.
• Ensure that the bootstrap capacitor is correctly sized to maintain the high side floating supply voltage (VB).
• Avoid excessive inductance in the gate drive paths to prevent oscillations and ensure reliable switching.
• Follow proper PCB layout guidelines to minimize noise and interference.

1. Issue: No Output Signal

   • Solution: Check the power supply connections and ensure that Vcc is within the specified range. Verify that the input signals (HIN and LIN) are correctly applied.

2. Issue: Excessive Heating

   • Solution: Ensure that the MOSFETs or IGBTs being driven are within their safe operating area. Check for proper heat sinking and cooling.

3. Issue: Erratic Switching

   • Solution: Verify the integrity of the input signals. Check for noise and interference in the gate drive paths. Use appropriate decoupling capacitors.

Q1: Can the IR2110S drive both MOSFETs and IGBTs?

• A1: Yes, the IR2110S is designed to drive both MOSFETs and IGBTs.

Q2: What is the maximum voltage that the high side floating supply (VB) can handle?

• A2: The high side floating supply (VB) can handle up to 600V.

Q3: How do I size the bootstrap capacitor?

• A3: The bootstrap capacitor should be sized based on the gate charge of the high side MOSFET or IGBT and the switching frequency. A typical value is between 0.1µF and 1µF.

// Example code to control IR2110S with Arduino UNO

const int HIN = 2; // High side input pin
const int LIN = 3; // Low side input pin

void setup() {
  pinMode(HIN, OUTPUT);
  pinMode(LIN, OUTPUT);
}

void loop() {
  // Turn on high side MOSFET
  digitalWrite(HIN, HIGH);
  digitalWrite(LIN, LOW);
  delay(1000); // Wait for 1 second

  // Turn on low side MOSFET
  digitalWrite(HIN, LOW);
  digitalWrite(LIN, HIGH);
  delay(1000); // Wait for 1 second
}

This example code demonstrates how to control the IR2110S using an Arduino UNO. The HIN and LIN pins are connected to digital pins 2 and 3 of the Arduino, respectively. The code alternates between turning on the high side and low side MOSFETs with a 1-second delay.

By following this documentation, users can effectively integrate the IR2110S into their electronic projects, ensuring reliable and efficient operation.