How to Use MOSFET: Examples, Pinouts, and Specs

The IRFP250N is a high-power N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Infineon Technologies. It is designed for use in high-efficiency switching applications and power amplification circuits. With its low on-resistance, high current-handling capability, and fast switching speed, the IRFP250N is ideal for applications such as motor control, power supplies, inverters, and audio amplifiers.

• DC-DC converters
• Motor drivers
• Uninterruptible Power Supplies (UPS)
• Solar inverters
• High-frequency switching circuits

The following table outlines the key technical specifications of the IRFP250N MOSFET:

The IRFP250N MOSFET has three terminals: Gate (G), Drain (D), and Source (S). The pinout for the TO-247 package is as follows:

1. Gate Drive Voltage: Ensure the gate voltage (V_GS) is within the specified range (±20V). For optimal performance, a gate voltage of 10-15V is recommended.
2. Load Connection: Connect the load between the drain and the positive supply voltage for high-side switching, or between the source and ground for low-side switching.
3. Gate Resistor: Use a gate resistor (typically 10-100Ω) to limit the inrush current and prevent damage to the gate.
4. Heat Dissipation: The IRFP250N can handle high power, so ensure proper heat sinking or cooling to prevent overheating.
5. Protection: Add a flyback diode across inductive loads to protect the MOSFET from voltage spikes during switching.

The IRFP250N can be used with an Arduino UNO to control a DC motor. Below is an example circuit and code:

• Connect the Gate of the IRFP250N to a PWM pin on the Arduino (e.g., pin 9) through a 100Ω resistor.
• Connect the Source to ground.
• Connect the Drain to one terminal of the motor, and the other terminal of the motor to the positive supply voltage.
• Add a flyback diode (e.g., 1N4007) across the motor terminals to protect the MOSFET.

// IRFP250N MOSFET Control Example
// This code uses PWM to control the speed of a DC motor.

const int pwmPin = 9; // PWM pin connected to the Gate of the MOSFET

void setup() {
  pinMode(pwmPin, OUTPUT); // Set the PWM pin as an output
}

void loop() {
  // Gradually increase motor speed
  for (int dutyCycle = 0; dutyCycle <= 255; dutyCycle++) {
    analogWrite(pwmPin, dutyCycle); // Write PWM signal to the MOSFET Gate
    delay(10); // Wait for 10ms
  }

  // Gradually decrease motor speed
  for (int dutyCycle = 255; dutyCycle >= 0; dutyCycle--) {
    analogWrite(pwmPin, dutyCycle); // Write PWM signal to the MOSFET Gate
    delay(10); // Wait for 10ms
  }
}

• Gate Drive Requirements: Ensure the gate voltage is sufficient to fully turn on the MOSFET. Logic-level MOSFETs may be required for low-voltage control.
• Thermal Management: Use a heat sink or active cooling to manage heat dissipation during high-power operation.
• Switching Speed: Minimize gate capacitance effects by using a proper gate driver circuit for high-frequency applications.

1. MOSFET Overheating

   • Cause: Insufficient heat dissipation or improper gate drive voltage.
   • Solution: Use a heat sink and ensure the gate voltage is within the recommended range.

2. MOSFET Not Switching

   • Cause: Gate voltage too low or incorrect wiring.
   • Solution: Verify the gate voltage and check the circuit connections.

3. High Power Loss

   • Cause: High R_DS(on) or insufficient gate drive.
   • Solution: Ensure the MOSFET is fully turned on by applying the correct gate voltage.

Q: Can the IRFP250N be used for high-frequency switching?
A: Yes, but ensure a proper gate driver circuit is used to minimize switching losses and handle the gate capacitance.

Q: What is the maximum current the IRFP250N can handle?
A: The IRFP250N can handle up to 30A continuously and 120A in pulsed mode, provided proper cooling is implemented.

Q: Is the IRFP250N suitable for low-voltage applications?
A: The IRFP250N is optimized for high-power applications. For low-voltage applications, consider using a logic-level MOSFET.

By following the guidelines and recommendations in this documentation, users can effectively integrate the IRFP250N MOSFET into their electronic designs.